View 2SK308506_4125601.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK3085
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3085
Chopper Regulator, DC-DC Converter and Motor Drive Applications
* * * * Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 3.5 14 75 227 3.5 7.5 150 -55~150 Unit V V V A W mJ A mJ C C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
TO-220AB SC-46 2-10P1B
Weight: 2.0 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.67 83.3 Unit C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C, L = 28.8 mH, RG = 25 , IAR = 3.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-08
2SK3085
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate -source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 3.5 A - Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton ID = 1.8 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1.8 A VDS = 10 V, ID = 1.8 A Min 30 600 2.0 2.0 Typ. 1.7 3.0 800 6 65 15 50 15 85 20 10 10 Max 10 100 4.0 2.2 pF Unit A V A V V S
10 V VGS 0V 50

ns
VOUT

RL = 111

nC
Duty < 1%, tw = 10 s =
VDD 220 V -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 3.5 A, VGS = 0 V IDR = 3.5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 400 2.6 Max 3.5 14 -1.7 Unit A A V ns C
Marking
K3085
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2006-11-08
2SK3085
ID - VDS
2.0 Common source Tc = 25 C Pulse test 8 1.2 4.8 0.8 4.6 0.4 4.4 4.2 0 VGS = 4 V 0 1 2 3 4 5 0 10 15 7 6 5 4 5 Common source Tc = 25 C 10 Pulse test
ID - VDS
15 7 6 8
1.6
Drain current ID (A)
Drain current ID (A)
5.5
3
5.5
2 5 1 4.5 VGS = 4 V 0 4 8 12 16 20
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VDS
4 Common source VDS = 20 V Pulse test 20
VDS - VGS
Common source Tc = 25 C Pulse test
Tc = -55 C 25
VDS (V) Drain-source voltage
16
Drain current ID (A)
3
12
2 100
8
ID = 3.5 A
1
4
1.8 1
0
0
2
4
6
8
10
0 0
4
8
12
16
20
24
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID
10 Common source VDS = 20 V Pulse test 10 Common source Tc = 25 C Pulse test
RDS (ON) - ID
(S)
Forward transfer admittance Yfs
3
100
Drain-source on resistance RDS (ON) ()
5
Tc = -55 C 25
5 3
VGS = 10, 15 V
1
1
0.5 0.3 0.1
0.5 0.3 0.1
0.3
0.5
1
3
5
10
0.3
0.5
1
3
5
10
Drain current ID (A)
Drain current ID (A)
3
2006-11-08
2SK3085
RDS (ON) - Tc
10 Common source VGS = 10 V Pulse test 30 Common source Tc = 25 C Pulse test
IDR - VDS
(A) Drain reverse current IDR
Drain-source on resistance RDS (ON) ()
8
10 5 3
6
4
ID = 2.5 A 1
1 0.5 0.3 3 10 VGS = 0, -1 V
2
0 -80
-40
0
40
80
120
160
0 1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Case temperature Tc
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
3000 5
Vth - Tc
Common source VDS = 10 V ID = 1 mA Pulse test
Vth (V) Gate threshold voltage
1000 500 300 100 50 30 Common source VGS = 0 V f = 1 MHz Tc = 25 C 3 5 10 30
Ciss
4
(pF)
3
Capacitance C
Coss
2
10
1
Crss 50 100 0 -80 -40 0 40 80 120 160
3 1
Drain-source voltage
VDS (V)
Case temperature Tc
(C)
PD - Tc
100
Drain power dissipation PD (W)
80
60
40
20
0 0
40
80
120
160
200
Case temperature Tc
(C)
4
2006-11-08
2SK3085
rth - tw
3
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.01 0.01 0.005 0.003 10 100 1m 10 m 100 m 0.05 0.02 Single pulse PDM t T Duty = t/T Rth (ch-c) = 1.67C/W 1 10
Pulse width
tw
(S)
Safe operating area
100 250 50 30 ID max (pulse) * 10 100 s *
EAS - Tch
EAS (mJ) Avalanche energy
200
150
(A)
5 3
ID max (continuous)
1 ms *
100
ID
Drain current
1 0.5 0.3
DC operation Tc = 25C
50
0 25
50
75
100
125
150
0.1 * Single nonrepetitive pulse 0.05 0.03 Tc = 25C Curves must be derated linearly with increase in temperature. VDSS max 0.01 1 3 10 30 100 300 1000
Channel temperature
Tch
(C)
15 V -15 V
BVDSS IAR VDD VDS
Drain-source voltage
VDS
(V)
Test circuit RG = 25 VDD = 90 V, L = 28.8 mH
Wave form
AS =
1 B VDSS L I2 B 2 - VDD VDSS
5
2006-11-08
2SK3085
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-08

▲Up To Search▲

Price & Availability of 2SK308506

	To Download 2SK308506 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .